KVR32N22S6/4 from ValueRAM
A DDR4-3200 CL22 SDRAM (synchronous DRAM) memory module of 512M x 64-bit (4GB), 1Rx16, based on four 512M x 16-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
- Electrical Characteristics: VDD = 1.2V Typical, VDDQ = 1.2V Typical, VPP = 2.5V Typical, VDDSPD = 2.2V to 3.6V
- Technology: Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals, Auto-Self Refresh (ASR) at low power (LPASR), Data Bus Inversion (DBI) for data bus, On-die VREFDQ generation and calibration
- Architecture: Single Rank, Serial Presence Detect (SPD) EEPROM, 8 internal banks; 2 groups of 4 banks each
- Configuration: Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS), Selectable BC4 or BL8 on-the-fly (OTF), Fly-by topology, Terminated command and address bus
- Dimensions and Compliance: PCB: Height 1.23” (31.25mm), RoHS compliant and halogen-free
Specifications
- Memory: Capacity: 4 GB, Type: DDR4, Form Factor: 288-pin DIMM, Speed: 3200 MHz, Latency: CL22, Voltage: 1.2 V, VPP Voltage: 2.5 V, ECC: No, Buffer: Unbuffered, Chip configuration: 512M x 64, Standard: JEDEC, Finish: Gold-plated contacts
- Performance: Row Cycle Time: 45.75 ns, Refresh Row Cycle Time: 350 ns, Row Active Time: 32 ns
- Operating Conditions: Operating Temperature: 0 °C to 85 °C, Storage Temperature: -55 °C to 100 °C
KINGSTON VALUERAM 4GB DDR4 3200MHZ CL22 DIMM RAM MEMORY KVR32N22S6/4
KVR32N22S6/4 from ValueRAM
A DDR4-3200 CL22 SDRAM (synchronous DRAM) memory module of 512M x 64-bit (4GB), 1Rx16, based on four 512M x 16-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:
- Electrical Characteristics: VDD = 1.2V Typical, VDDQ = 1.2V Typical, VPP = 2.5V Typical, VDDSPD = 2.2V to 3.6V
- Technology: Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals, Auto-Self Refresh (ASR) at low power (LPASR), Data Bus Inversion (DBI) for data bus, On-die VREFDQ generation and calibration
- Architecture: Single Rank, Serial Presence Detect (SPD) EEPROM, 8 internal banks; 2 groups of 4 banks each
- Configuration: Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS), Selectable BC4 or BL8 on-the-fly (OTF), Fly-by topology, Terminated command and address bus
- Dimensions and Compliance: PCB: Height 1.23” (31.25mm), RoHS compliant and halogen-free
Specifications
- Memory: Capacity: 4 GB, Type: DDR4, Form Factor: 288-pin DIMM, Speed: 3200 MHz, Latency: CL22, Voltage: 1.2 V, VPP Voltage: 2.5 V, ECC: No, Buffer: Unbuffered, Chip configuration: 512M x 64, Standard: JEDEC, Finish: Gold-plated contacts
- Performance: Row Cycle Time: 45.75 ns, Refresh Row Cycle Time: 350 ns, Row Active Time: 32 ns
- Operating Conditions: Operating Temperature: 0 °C to 85 °C, Storage Temperature: -55 °C to 100 °C